Please use this identifier to cite or link to this item:
|Type:||Artigo de periódico|
|Title:||Electron cyclotron plasma etching damage investigated by InGaAs/GaAs quantum well photoluminescence|
|Abstract:||Photoluminescence (PL) was used to study the damage of (100) GaAs surfaces exposed to BCl3/Ar plasma generated by an electron cyclotron resonance system. With PL measurement of strained InGaAs/GaAs quantum wells within the etched top GaAs layer, our analysis shows that this technique assesses damages to the structure not detected by atomic force microscopy and photoreflectance. A transport model is used to show a 100 times reduction in the Debye length for a 100 nm layer underneath the etching surface. (c) 2006 American Vacuum Society.|
|Editor:||A V S Amer Inst Physics|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.