Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/64477
Type: Artigo de periódico
Title: Electron cyclotron plasma etching damage investigated by InGaAs/GaAs quantum well photoluminescence
Author: Mestanza, SNM
Frateschi, NC
Abstract: Photoluminescence (PL) was used to study the damage of (100) GaAs surfaces exposed to BCl3/Ar plasma generated by an electron cyclotron resonance system. With PL measurement of strained InGaAs/GaAs quantum wells within the etched top GaAs layer, our analysis shows that this technique assesses damages to the structure not detected by atomic force microscopy and photoreflectance. A transport model is used to show a 100 times reduction in the Debye length for a 100 nm layer underneath the etching surface. (c) 2006 American Vacuum Society.
Country: EUA
Editor: A V S Amer Inst Physics
Rights: aberto
Identifier DOI: 10.1116/1.2366543
Date Issue: 2006
Appears in Collections:Unicamp - Artigos e Outros Documentos

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