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dc.contributor.CRUESPUniversidade Estadual de Campinaspt_BR
dc.typeArtigo de periódicopt_BR
dc.titleEffect of hydrogen and oxygen on stainless steel nitridingpt_BR
dc.contributor.authorFigueroa, CApt_BR
dc.contributor.authorWisnivesky, Dpt_BR
dc.contributor.authorAlvarez, Fpt_BR
unicamp.authorUNICAMP, Inst Fis Gleb Wataghin, BR-13083970 Campinas, SP, Brazilpt_BR
dc.subject.wosPlasma-diffusion Treatmentpt_BR
dc.subject.wosIon-implantationpt_BR
dc.subject.wosLow-temperaturept_BR
dc.subject.wosLow-energypt_BR
dc.subject.wosRf Plasmapt_BR
dc.subject.wosPressurept_BR
dc.subject.wosResistancept_BR
dc.subject.wosMechanismspt_BR
dc.description.abstractThe influence of hydrogen and oxygen on stainless steel implanted by nitrogen low-energy ions is systematically studied. It is shown that hydrogen intervenes moderately in the process only when the oxygen partial pressure in the deposition chamber is relatively high. For very low-oxygen partial pressures, the energetic nitrogen molecules impinging on the substrate sputter the thin oxide layer formed on the substrate. This allows the growing of a rich nitrogen layer beneath the surface, improving the diffusing of the implanted atom deeper in the bulk material. For higher-oxygen partial pressures, the sputtering is ineffective, and an oxide layer partially covers the surface even in the presence of hydrogen. The maximum depth penetration of nitrogen depends on the degree of oxygen coverage, which is fairly well described by a Langmuir absorption isothermal. Hardness depth profiling is consistent with the existence of a diffusion barrier formed by the oxygen absorbed on the surface. In order to understand the role of hydrogen on the nitriding process, samples preimplanted with hydrogen were subsequently treated with nitrogen and the hardness depth profiling analyzed. These results may provide a clue about the practical consequences of oxygen and hydrogen on the nitriding process. (C) 2002 American Institute of Physics.pt
dc.relation.ispartofJournal Of Applied Physicspt_BR
dc.relation.ispartofabbreviationJ. Appl. Phys.pt_BR
dc.publisher.cityMelvillept_BR
dc.publisher.countryEUApt_BR
dc.publisherAmer Inst Physicspt_BR
dc.date.issued2002pt_BR
dc.date.monthofcirculation42186pt_BR
dc.identifier.citationJournal Of Applied Physics. Amer Inst Physics, v. 92, n. 2, n. 764, n. 770, 2002.pt_BR
dc.language.isoenpt_BR
dc.description.volume92pt_BR
dc.description.issuenumber2pt_BR
dc.description.firstpage764pt_BR
dc.description.lastpage770pt_BR
dc.rightsabertopt_BR
dc.sourceWeb of Sciencept_BR
dc.identifier.issn0021-8979pt_BR
dc.identifier.wosidWOS:000176600000015pt_BR
dc.identifier.doi10.1063/1.1483893pt_BR
dc.date.available2014-11-13T11:30:30Z
dc.date.available2015-11-26T18:07:13Z-
dc.date.accessioned2014-11-13T11:30:30Z
dc.date.accessioned2015-11-26T18:07:13Z-
dc.description.provenanceMade available in DSpace on 2014-11-13T11:30:30Z (GMT). No. of bitstreams: 1 WOS000176600000015.pdf: 278141 bytes, checksum: a19caa026e681f093faacbc2a693fe2a (MD5) Previous issue date: 2002en
dc.description.provenanceMade available in DSpace on 2015-11-26T18:07:13Z (GMT). No. of bitstreams: 2 WOS000176600000015.pdf: 278141 bytes, checksum: a19caa026e681f093faacbc2a693fe2a (MD5) WOS000176600000015.pdf.txt: 39202 bytes, checksum: bd7e7e3dfe32c131d40352817c7e8c9b (MD5) Previous issue date: 2002en
dc.identifier.urihttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/64418pt_BR
dc.identifier.urihttp://www.repositorio.unicamp.br/handle/REPOSIP/64418
dc.identifier.urihttp://repositorio.unicamp.br/jspui/handle/REPOSIP/64418-
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