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Type: Artigo de periódico
Title: Effect of MnAs/GaAs(001) film accommodations on the phase-transition temperature
Author: Iikawa, F
Brasil, MJSP
Couto, ODD
Adriano, C
Giles, C
Daweritz, L
Abstract: The phase-transition temperature of MnAs epitaxial films grown by molecular-beam epitaxy on GaAs(001) with different crystalline accommodations was studied by specular and grazing incidence x-ray diffraction. The transition temperature of MnAs films with tilted hexagonal c-axis orientations with respect to the GaAs substrate is higher than the most investigated nontilted films and reaches a value above room temperature, which is more suitable for device applications. (C) 2004 American Institute of Physics.
Country: EUA
Editor: Amer Inst Physics
Citation: Applied Physics Letters. Amer Inst Physics, v. 85, n. 12, n. 2250, n. 2252, 2004.
Rights: aberto
Identifier DOI: 10.1063/1.1791739
Date Issue: 2004
Appears in Collections:Unicamp - Artigos e Outros Documentos

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