Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/64243
Type: Artigo de periódico
Title: Effect of processing parameters on control of defect centers associated with second-order harmonic generation and photosensitivity in SiO2 : GeO2 glass preforms
Author: Cuevas, RF
Sekiya, EH
Garcia-Quiroz, A
Da Silva, EC
Suzuki, CK
Abstract: In this research, the effect of the H-2/O-2 ratio and the processing temperature parameters on the inducing and enhancement of the defect centers associated to the second-order optical non-linearity in SiO2:GeO2 glass preforms, prepared by vapor-phase axial deposition method, have been investigated. The formation of germanium oxygen deficient centers and the development of paramagnetic structures induced in the glass preforms after X-ray irradiation were investigated using UV-Vis absorption spectroscopy and electronic spin resonance. The results indicate that the concentration of germanium oxygen deficient centers increases exponentially when the H-2/O-2 ratio decreases, while the processing temperature increases, simultaneously. The electronic spin resonance spectra profiles, shows that defects of the electron trapped centers type [Ge(1), Ge(2)] are induced by the effect of X-ray irradiation. An efficient generation of defect centers associated to the second-order optical non-linearity in SiO2:GeO2 glass preforms, occurring in samples prepared with low H-2/O-2 ratios and high processing temperatures, have been observed. (c) 2005 Elsevier B.V. All rights reserved.
Subject: VAD process
glass preform
defect centers
second-order optical non-linearity
Country: Holanda
Editor: Elsevier Science Bv
Rights: fechado
Identifier DOI: 10.1016/j.nimb.2005.12.050
Date Issue: 2006
Appears in Collections:Unicamp - Artigos e Outros Documentos

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