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|Type:||Artigo de periódico|
|Title:||Driving-dependent damping of rabi oscillations in two-level semiconductor systems|
|Abstract:||We propose a mechanism to explain the nature of the damping of Rabi oscillations with an increasing driving-pulse area in localized semiconductor systems and have suggested a general approach which describes a coherently driven two-level system interacting with a dephasing reservoir. Present calculations show that the non-Markovian character of the reservoir leads to the dependence of the dephasing rate on the driving-field intensity, as observed experimentally. Moreover, we have shown that the damping of Rabi oscillations might occur as a result of different dephasing mechanisms for both stationary and nonstationary effects due to coupling to the environment. Present calculated results are found in quite good agreement with available experimental measurements.|
|Editor:||Amer Physical Soc|
|Citation:||Physical Review Letters. Amer Physical Soc, v. 100, n. 1, 2008.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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