Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/63495
Type: Artigo de periódico
Title: Drifting electron excitation of acoustic phonons: Cerenkov-like effect in n-GaN
Author: Rodrigues, CG
Vasconcellos, AR
Luzzi, R
Abstract: The process of generation of acoustic phonons by way of drifting electron excitation in polar semiconductors is considered. Similarly to what is present in LO phonons, the emergence of a condensation of the pumped energy in modes around an off-center region of the Brillouin zone is evidenced. The phonons are emitted within a lobe-like distribution with an axis along the direction of the electric field. A numerical calculation for the case of GaN is done, which shows that the phenomenon can be largely enhanced at high carrier densities and in strong piezoelectric materials. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4795271]
Country: EUA
Editor: Amer Inst Physics
Rights: aberto
Identifier DOI: 10.1063/1.4795271
Date Issue: 2013
Appears in Collections:Unicamp - Artigos e Outros Documentos

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