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dc.contributor.CRUESPUniversidade Estadual de Campinaspt_BR
dc.typeArtigo de periódicopt_BR
dc.titleDressed-band approach to laser-field effects in semiconductors and quantum-confined heterostructurespt_BR
dc.contributor.authorBrandi, HSpt_BR
dc.contributor.authorLatge, Apt_BR
dc.contributor.authorOliveira, LEpt_BR
unicamp.authorUniv Fed Rio de Janeiro, Inst Fis, BR-21945970 Rio De Janeiro, Brazil Univ Fed Fluminense, Inst Fis, BR-24210340 Rio De Janeiro, Brazil UNICAMP, Inst Fis, BR-13083970 Campinas, SP, Brazilpt_BR
dc.subject.wosFractional-dimensional Approachpt_BR
dc.subject.wosIntradonor Absorption-spectrapt_BR
dc.subject.wosShallow-impurity Levelspt_BR
dc.subject.wosExternal Fieldspt_BR
dc.subject.wosWellspt_BR
dc.subject.wosExcitonspt_BR
dc.subject.wosTransitionspt_BR
dc.description.abstractA theoretical study of the effects of a laser field on the electronic and optical properties of GaAs-(Ga,Al)As heterostructures is presented by using a Kane model for the GaAs bulk semiconductor and working within an extended dressed-atom approach. For a laser tuned far below any resonances, the effects of the laser-semiconductor interaction correspond to a renormalization of the semiconductor energy gap and conduction/valence effective masses. This renormalized one-body approach may be used to give a qualitative indication of the laser effects on a variety of optoelectronic phenomena in semiconductor heterostructures for which the effective-mass approximation provides a good physical description. As a test, the exciton Stark shift in quantum wells is calculated and the effects due to the band-structure laser dressing are found to be of the same order of magnitude as those obtained from many-body diagrammatic techniques. We have also analyzed the effects of laser dressing on the shallow-donor peak energies in quantum wells, and found them comparable with; those produced by a magnetic field of a few teslas.pt
dc.relation.ispartofPhysical Review Bpt_BR
dc.relation.ispartofabbreviationPhys. Rev. Bpt_BR
dc.publisher.cityCollege Pkpt_BR
dc.publisher.countryEUApt_BR
dc.publisherAmerican Physical Socpt_BR
dc.date.issued2001pt_BR
dc.date.monthofcirculation42186pt_BR
dc.identifier.citationPhysical Review B. American Physical Soc, v. 64, n. 3, 2001.pt_BR
dc.language.isoenpt_BR
dc.description.volume64pt_BR
dc.description.issuenumber3pt_BR
dc.rightsabertopt_BR
dc.sourceWeb of Sciencept_BR
dc.identifier.issn0163-1829pt_BR
dc.identifier.wosidWOS:000169989800074pt_BR
dc.identifier.doi10.1103/PhysRevB.64.035323pt_BR
dc.date.available2014-11-14T14:24:56Z
dc.date.available2015-11-26T16:06:51Z-
dc.date.accessioned2014-11-14T14:24:56Z
dc.date.accessioned2015-11-26T16:06:51Z-
dc.description.provenanceMade available in DSpace on 2014-11-14T14:24:56Z (GMT). No. of bitstreams: 1 WOS000169989800074.pdf: 146944 bytes, checksum: eb4c64871c66a1cb93b1ff5f906dbadd (MD5) Previous issue date: 2001en
dc.description.provenanceMade available in DSpace on 2015-11-26T16:06:51Z (GMT). No. of bitstreams: 2 WOS000169989800074.pdf: 146944 bytes, checksum: eb4c64871c66a1cb93b1ff5f906dbadd (MD5) WOS000169989800074.pdf.txt: 31200 bytes, checksum: 29329bea129849c4fd4bfbc68ae40f83 (MD5) Previous issue date: 2001en
dc.identifier.urihttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/63492pt_BR
dc.identifier.urihttp://www.repositorio.unicamp.br/handle/REPOSIP/63492
dc.identifier.urihttp://repositorio.unicamp.br/jspui/handle/REPOSIP/63492-
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