Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/63393
Type: Artigo de periódico
Title: Nanostructured tantalum nitride films as buffer-layer for carbon nanotube growth
Author: Jin, C
Delmas, M
Aubert, P
Alvarez, F
Minea, T
Hugon, MC
Bouchet-Fabre, B
Abstract: Tantalum nitride (TaN(x)) films are usually used as barriers to the diffusion of copper in the substrate for electronic devices. In the present work, the TaN(x) coating plays an extra role in the iron catalyzed chemical vapor deposition production of carbon nanotubes (CNT). The CNTs were grown at 850 degrees C on TaN(x) films prepared by radio frequency magnetron sputtering. The correlation between the CNT morphology and growth rate, and the pristine TaN(x) film nature, is investigated by comparing the evolution of the nano-composition, roughness and nano-crystallinity of the TaN(x) films both after annealing and CVD at 850 degrees C. 2011 Published by Elsevier B.V.
Subject: Material science
Tantalum nitride
Thin films
Chemical vapor deposition
Carbon nanotube
Diffusion barrier
Country: Suíça
Editor: Elsevier Science Sa
Rights: fechado
Identifier DOI: 10.1016/j.tsf.2011.01.367
Date Issue: 2011
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
WOS000290184500027.pdf659.3 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.