Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/63270
Type: Artigo de periódico
Title: Broad temperature operation and widely tunable high dynamic range high-speed amplified electroabsorption modulator
Author: Foulk, H
O'Brien, S
Gebretsadik, H
Frateschi, N
Choi, WJ
Bond, AE
Abstract: In this work, we demonstrate high analog performance of an eleetroabsorption (EA) Jumped-element modulator monolithically integrated with a semiconductor amplifier over a broad temperature and wavelength range. Using the Stark effect (bandedge tuning with bias), the amplified EA modulator exhibits minimal changes in second- and third-order spur-free dynamic range (SFDR) as well as link gain over a 45 degrees C range in chip temperature. We further demonstrate tunability of the amplified modulator over 25 nm of wavelength from 1530 to 1555 run with little-to-no degradation in SFDR, link gain, and noise figure.
Subject: analog
dynamic range
high speed
high-temperature
integrated
linear
modulators
semiconductor optical amplifiers
tunable
Country: EUA
Editor: Ieee-inst Electrical Electronics Engineers Inc
Rights: fechado
Identifier DOI: 10.1109/LPT.2005.856400
Date Issue: 2005
Appears in Collections:Unicamp - Artigos e Outros Documentos

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