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|Type:||Artigo de periódico|
|Title:||Broad temperature operation and widely tunable high dynamic range high-speed amplified electroabsorption modulator|
|Abstract:||In this work, we demonstrate high analog performance of an eleetroabsorption (EA) Jumped-element modulator monolithically integrated with a semiconductor amplifier over a broad temperature and wavelength range. Using the Stark effect (bandedge tuning with bias), the amplified EA modulator exhibits minimal changes in second- and third-order spur-free dynamic range (SFDR) as well as link gain over a 45 degrees C range in chip temperature. We further demonstrate tunability of the amplified modulator over 25 nm of wavelength from 1530 to 1555 run with little-to-no degradation in SFDR, link gain, and noise figure.|
semiconductor optical amplifiers
|Editor:||Ieee-inst Electrical Electronics Engineers Inc|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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