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dc.contributor.CRUESPUniversidade Estadual de Campinaspt_BR
dc.typeArtigo de periódicopt_BR
dc.titleChemical (dis)order in a-Si1-xCx:H for x<0.6pt_BR
dc.contributor.authorRovira, PIpt_BR
dc.contributor.authorAlvarez, Fpt_BR
dc.subject.wosHydrogenated Amorphous-siliconpt_BR
dc.subject.wosCarbon Alloy-filmspt_BR
dc.subject.wosArgon Gas-mixturespt_BR
dc.subject.wosSic-h Alloyspt_BR
dc.subject.wosInfrared-absorptionpt_BR
dc.subject.wosStructural-propertiespt_BR
dc.subject.wosCarbide Filmspt_BR
dc.subject.wosPhotoelectron-spectroscopypt_BR
dc.subject.wosOptoelectronic Propertiespt_BR
dc.subject.wosPhoto-luminescencept_BR
dc.description.abstractWe studied the local bonding structure of the hydrogenated amorphous silicon-carbon alloy system (a-Si1-xCx:H). The chemistry of the carbon incorporation in the alloys for 0<x<0.6 was analyzed by infrared and visible spectroscopies. The material was deposited in a controlled atmosphere of argon and hydrogen by rf cosputtering of Si and C targets. We found that up to x approximate to 0.2 the carbon atom prefers to bond in a chemically disordered configuration, i.e., homonuclear bonds are favored. Between 0.2<x<0.6 a tendency to chemical ordering is apparent. These results are consistent with the behavior of the optical gap, the Urbach energy, and the density of defects of the material as a function of x.pt
dc.relation.ispartofPhysical Review Bpt_BR
dc.relation.ispartofabbreviationPhys. Rev. Bpt_BR
dc.publisher.cityCollege Pkpt_BR
dc.publisher.countryEUApt_BR
dc.publisherAmerican Physical Socpt_BR
dc.date.issued1997pt_BR
dc.date.monthofcirculationFEB 15pt_BR
dc.identifier.citationPhysical Review B. American Physical Soc, v. 55, n. 7, n. 4426, n. 4434, 1997.pt_BR
dc.language.isoenpt_BR
dc.description.volume55pt_BR
dc.description.issuenumber7pt_BR
dc.description.firstpage4426pt_BR
dc.description.lastpage4434pt_BR
dc.rightsabertopt_BR
dc.sourceWeb of Sciencept_BR
dc.identifier.issn0163-1829pt_BR
dc.identifier.wosidWOS:A1997WK49300068pt_BR
dc.identifier.doi10.1103/PhysRevB.55.4426pt_BR
dc.date.available2014-12-16T11:36:39Z
dc.date.available2015-11-26T16:24:27Z-
dc.date.accessioned2014-12-16T11:36:39Z
dc.date.accessioned2015-11-26T16:24:27Z-
dc.description.provenanceMade available in DSpace on 2014-12-16T11:36:39Z (GMT). No. of bitstreams: 1 WOSA1997WK49300068.pdf: 186717 bytes, checksum: bfe692eec27490dd71f7396575b00fb0 (MD5) Previous issue date: 1997en
dc.description.provenanceMade available in DSpace on 2015-11-26T16:24:27Z (GMT). No. of bitstreams: 2 WOSA1997WK49300068.pdf: 186717 bytes, checksum: bfe692eec27490dd71f7396575b00fb0 (MD5) WOSA1997WK49300068.pdf.txt: 45350 bytes, checksum: 348fcc0f68cf89c72a94e461917cbb38 (MD5) Previous issue date: 1997en
dc.identifier.urihttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/62960pt_BR
dc.identifier.urihttp://www.repositorio.unicamp.br/handle/REPOSIP/62960
dc.identifier.urihttp://repositorio.unicamp.br/jspui/handle/REPOSIP/62960-
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