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|Type:||Artigo de periódico|
|Title:||Chemical (dis)order in a-Si1-xCx:H for x<0.6|
|Abstract:||We studied the local bonding structure of the hydrogenated amorphous silicon-carbon alloy system (a-Si1-xCx:H). The chemistry of the carbon incorporation in the alloys for 0<x<0.6 was analyzed by infrared and visible spectroscopies. The material was deposited in a controlled atmosphere of argon and hydrogen by rf cosputtering of Si and C targets. We found that up to x approximate to 0.2 the carbon atom prefers to bond in a chemically disordered configuration, i.e., homonuclear bonds are favored. Between 0.2<x<0.6 a tendency to chemical ordering is apparent. These results are consistent with the behavior of the optical gap, the Urbach energy, and the density of defects of the material as a function of x.|
|Editor:||American Physical Soc|
|Citation:||Physical Review B. American Physical Soc, v. 55, n. 7, n. 4426, n. 4434, 1997.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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