Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/62862
Type: Artigo de periódico
Title: Characterization of nanometric quantum wells in semiconductor heterostructures by optical spectroscopy
Author: Laureto, E
Vasconcellos, AR
Meneses, EA
Luzzi, R
Abstract: Quantum wells with fractal-like interfaces arise in the growth of semiconductor heterostructures. Such fractal characteristics largely influence the optical and transport properties in these constrained geometries. We report a systematic study of growth through the study of optical properties. The spectra obtained show "anomalous behavior", whose characteristics depends on the growth procedure. The theoretical analysis was performed resorting to an unconventional statistical-mechanical formalism. It allows one to correlate growth conditions with surface roughness, and to determine their influence on experimental results, allowing one to obtain a picture of the physics involved in such systems.
Subject: quantum wells
photoluminescence
fractality in growth
quality characterization
unconventional statistical approach
Country: Singapura
Editor: World Scientific Publ Co Pte Ltd
Rights: fechado
Identifier DOI: 10.1142/S021797920402480X
Date Issue: 2004
Appears in Collections:Unicamp - Artigos e Outros Documentos

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