Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/62847
Type: Artigo de periódico
Title: Characterization of InP grown by LEC using glassy carbon, silica and PBN crucibles
Author: de Oliveira, CEM
de Carvalho, MMG
Mendonca, CAC
Miskys, CR
Guadalupi, GM
Battagliarin, M
Bueno, MIMS
Abstract: Undoped InP single crystals were grown by liquid-encapsulated Czochralski method (LEG) using glassy carbon, silica and PBN crucibles. The samples were characterized by Hall and resistivity measurements, photoluminescence at 2 K and glow discharge mass spectroscopy. The residual impurity concentrations for InP grown using glassy carbon or silica crucible are of the same order of magnitude but both higher than that for InP grown with PEN crucibles. All samples exhibit good optical quality. The main acceptor impurities detected in all samples were C and Zn, while the main donors were S and Si. The InP grown from the glassy carbon crucible has the lowest C concentration and the main dopant detected in this sample was S originating from the crucible. (C) 1998 Elsevier Science B.V. All rights reserved.
Country: Holanda
Editor: Elsevier Science Bv
Rights: fechado
Identifier DOI: 10.1016/S0022-0248(97)00815-4
Date Issue: 1998
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
WOS000072851000003.pdf408.03 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.