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|Type:||Artigo de periódico|
|Title:||Characterization of different length scales and periodicities in Ge/Si microstructures by Raman spectroscopy: Theory and experiment|
|Abstract:||The Raman spectra of samples of the type [(GenSim)(N-1) Ge-n Si-M] x p with n approximate to m approximate to 5 monolayers, M approximate to 200 monolayers and p approximate to 10-20 were measured in the backscattering configuration in the wavenumber range 2-600 cm(-1). The experimental results are discussed by comparison with simulated spectra calculated with a linear chain model with bond polarizabilities for the Raman intensities, Comparison between experimental and theoretical spectra gives insights into the sensitivity of the different Raman peaks as a probe of periodicity and interface roughness length scales.|
|Editor:||John Wiley & Sons Ltd|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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