Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/62835
Type: Artigo de periódico
Title: Characterization of different length scales and periodicities in Ge/Si microstructures by Raman spectroscopy: Theory and experiment
Author: Silva, MAA
Ribeiro, E
Schulz, PA
Cerdeira, F
Bean, JC
Abstract: The Raman spectra of samples of the type [(GenSim)(N-1) Ge-n Si-M] x p with n approximate to m approximate to 5 monolayers, M approximate to 200 monolayers and p approximate to 10-20 were measured in the backscattering configuration in the wavenumber range 2-600 cm(-1). The experimental results are discussed by comparison with simulated spectra calculated with a linear chain model with bond polarizabilities for the Raman intensities, Comparison between experimental and theoretical spectra gives insights into the sensitivity of the different Raman peaks as a probe of periodicity and interface roughness length scales.
Country: Inglaterra
Editor: John Wiley & Sons Ltd
Rights: fechado
Date Issue: 1996
Appears in Collections:Unicamp - Artigos e Outros Documentos

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