Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/62507
Type: Artigo
Title: Dislocation core properties in semiconductors
Author: Justo, João F.
Antonelli, A.
Fazzio, A.
Abstract: Using ab initio calculations, we computed the core reconstruction energies of {111} 30 degrees partial dislocations in zinc-blende semiconductors. Our results show a direct correlation between core reconstruction energies and the experimental activation energies for the velocity of 60 degrees dislocations. The electronic structure of unreconstructed dislocation cores comprises a half-filled band, which splits up in bonding and antibonding levels upon reconstruction. The levels in the electronic gap come from the core of beta dislocations, while the levels related to or dislocations lie on the valence band. (C) 2001 Elsevier Science Ltd. All rights reserved.
Using ab initio calculations, we computed the core reconstruction energies of {111} 30° partial dislocations in zinc-blende semiconductors. Our results show a direct correlation between core reconstruction energies and the experimental activation energies for the velocity of 60° dislocations. The electronic structure of unreconstructed dislocation cores comprises a half-filled band, which splits up in bonding and antibonding levels upon reconstruction. The levels in the electronic gap come from the core of β dislocations, while the levels related to a dislocations lie on the valence band.
Subject: Semicondutores
Estrutura eletrônica
Deslocamentos em cristais
Country: Reino Unido
Editor: Pergamon Press
Citation: Solid State Communications. Pergamon-elsevier Science Ltd, v. 118, n. 12, n. 651, n. 655, 2001.
Rights: fechado
Identifier DOI: 10.1016/S0038-1098(01)00197-1
Address: https://www.sciencedirect.com/science/article/pii/S0038109801001971
Date Issue: 2001
Appears in Collections:IFGW - Artigos e Outros Documentos

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