Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/62455
Type: Artigo de periódico
Title: Dopant impurity-induced defects in p-type doped hydrogenated amorphous germanium
Author: Comedi, D
Chambouleyron, I
Abstract: The defect density (N-D) in hydrogenated amorphous germanium (a-Ge:H) doped p-type by aluminum, gallium, or indium was studied as a function of the dopant impurity concentration (N-imp) by using photothermal deflection spectroscopy. N-D remains roughly constant with increasing N-imp for N-imp < 2 x 10(19) cm(-)3 and increases linearly for larger N-imp for Al, Ga, or In doping, On the other hand, the dependence of N-D on the Fermi energy (as deduced from conductivity measurements) is different for the different dopant impurities, contrary to predictions of charge-induced weak bond-dangling bond conversion models. A mechanism involving direct dangling bond formation induced by sp(2) bonded dopant impurities qualitatively accounts for the observed results. (C) 1996 American Institute of Physics.
Editor: Amer Inst Physics
Rights: aberto
Identifier DOI: 10.1063/1.118014
Date Issue: 1996
Appears in Collections:Unicamp - Artigos e Outros Documentos

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