Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/62248
Type: Artigo de periódico
Title: NUMERICAL-CALCULATIONS OF THE ELECTRICAL EFFECTS INDUCED BY STRUCTURAL IMPERFECTIONS ON MOS CAPACITORS
Author: LOPES, MCV
HASENACK, CM
BARANAUSKAS, V
Abstract: As the thickness of gate quality SiO2 is reduced, minor structural interface imperfections begin to play an important role in device performance and yield. To isolate the effects of a variety of such interface imperfections on electric field distribution within the SiO2 layer of biased metal oxide semiconductor capacitors, numerical calculations were carried out. The results indicate that strong electric field distortions may be expected for almost any interfacial defect configuration, being highest for metal precipitates. Technological consequences of the findings are also discussed.
Editor: Electrochemical Soc Inc
Rights: aberto
Identifier DOI: 10.1149/1.2054972
Date Issue: 1994
Appears in Collections:Unicamp - Artigos e Outros Documentos

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