Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/62046
Type: Artigo de periódico
Title: Non-Markovian damping of Rabi oscillations in semiconductor quantum dots
Author: Mogilevtsev, D
Nisovtsev, AP
Kilin, S
Cavalcanti, SB
Brandi, HS
Oliveira, LE
Abstract: A systematic investigation is performed on the damping of Rabi oscillations induced by an external electromagnetic field interacting with a two-level semiconductor system. We have considered a coherently driven two-level system coupled to a dephasing reservoir and shown that, to explain the dependence of the dephasing rate on the driving intensity, it is essential to consider the non-Markovian character of the reservoir. Moreover, we have demonstrated that intensity-dependent damping may be induced by various dephasing mechanisms due to stationary as well as non-stationary effects caused by coupling with the environment. Finally, present results are able to explain a variety of experimental measurements available in the literature.
Country: Inglaterra
Editor: Iop Publishing Ltd
Rights: fechado
Identifier DOI: 10.1088/0953-8984/21/5/055801
Date Issue: 2009
Appears in Collections:Unicamp - Artigos e Outros Documentos

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