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|Type:||Artigo de periódico|
|Title:||Non-Markovian damping of Rabi oscillations in semiconductor quantum dots|
|Abstract:||A systematic investigation is performed on the damping of Rabi oscillations induced by an external electromagnetic field interacting with a two-level semiconductor system. We have considered a coherently driven two-level system coupled to a dephasing reservoir and shown that, to explain the dependence of the dephasing rate on the driving intensity, it is essential to consider the non-Markovian character of the reservoir. Moreover, we have demonstrated that intensity-dependent damping may be induced by various dephasing mechanisms due to stationary as well as non-stationary effects caused by coupling with the environment. Finally, present results are able to explain a variety of experimental measurements available in the literature.|
|Editor:||Iop Publishing Ltd|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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