Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/62032
Type: Artigo de periódico
Title: NONLINEAR TRANSPORT IN PHOTOEXCITED PLASMA IN SEMICONDUCTORS - NONOHMIC MOBILITY AND A GENERALIZED EINSTEIN RELATION
Author: VASCONCELLOS, AR
ALGARTE, ACS
LUZZI, R
Abstract: Resorting to a theory of responses to thermal and mechanical perturbations, based on statistical irreversible thermodynamics for systems arbitrarily away from equilibrium, we obtain the diffusion and mobility coefficients in a highly photoexcited plasma in semiconductors in the presence of an electric field. They are dependent on the evolution of the nonequilibrium thermodynamic state of the system. From these transport coefficients we derived a generalized Einstein relation for ultrafast transient regimes and for non-Ohmic conditions. In all cases this generalized Einstein law acquires values that are field dependent and larger than those in its original form only valid in steady-state conditions and the limit of weak fields. Numerical results appropriate for the case of a GaAs sample are presented.
Country: EUA
Editor: American Physical Soc
Rights: aberto
Identifier DOI: 10.1103/PhysRevB.52.13936
Date Issue: 1995
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
WOSA1995TG78000042.pdf392.09 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.