Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/61470
Type: Artigo de periódico
Title: Determination of the valence band offset of a mu c-C/c-Si(100) heterojunction using low energy yield spectroscopy
Author: Bittencourt, C
Abstract: The valence band offset developed in the heterostructure formed by depositing carbon on a Si(100) substrate was determined using a combination of low energy yield spectroscopy and x-ray photoemission spectroscopy. The spontaneous formation of an SiC layer between the crystalline silicon substrate and the carbon film was observed. Valence band offsets of 0.77 +/- 0.08 eV at the SiC/c-Si interface and 1.55 +/- 0.08 eV for the mu c-C/SiC interface were found. Taking into account the band bending at the SiC layer after the microcrystalline graphite layer formation, the valence band offset between the silicon substrate and the carbon layer was evaluated to be 0.63 +/- 0.08 eV, with the valence band edge of the carbon film being at higher energy than that of the silicon.
Country: Inglaterra
Editor: Iop Publishing Ltd
Rights: fechado
Identifier DOI: 10.1088/0953-8984/11/4/003
Date Issue: 1999
Appears in Collections:Unicamp - Artigos e Outros Documentos

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