Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/61173
Type: Artigo de periódico
Title: Laser-dressing effects on the electron g factor in low-dimensional semiconductor systems under applied magnetic fields
Author: Lopez, FE
Reyes-Gomez, E
Brandi, HS
Porras-Montenegro, N
Oliveira, LE
Abstract: The effects of a laser field on the conduction-electron effective Lande g factor in GaAs-Ga1-xAlxAs quantum wells and quantum-well wires under applied magnetic fields are studied within the effective-mass approximation. The interaction between the laser field and the semiconductor heterostructure is taken into account via a renormalization of the semiconductor energy gap and conduction-electron effective mass. Calculations are performed for the conduction-electron Lande factor and g-factor anisotropy by considering the non-parabolicity and anisotropy of the conduction band. Theoretical results are obtained as functions of the laser intensity, detuning and geometrical parameters of the low-dimensional semiconductor heterostructures, and indicate the possibility of manipulating and tuning the conduction-electron g factor in heterostructures by changing the detuning and laser-field intensity.
Country: Inglaterra
Editor: Iop Publishing Ltd
Rights: fechado
Identifier DOI: 10.1088/0022-3727/42/11/115304
Date Issue: 2009
Appears in Collections:Unicamp - Artigos e Outros Documentos

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