Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/61172
Type: Artigo de periódico
Title: Laser-dressing and magnetic-field effects on shallow-donor impurity states in semiconductor GaAs-Ga1-xAlxAs cylindrical quantum-well wires
Author: Lopez, FE
Reyes-Gomez, E
Porras-Montenegro, N
Brandi, HS
Oliveira, LE
Abstract: The influence of an intense laser field on shallow-donor states in cylindrical GaAs-Ga1-xAlxAs quantum-well wires under an external magnetic field applied along the wire axis is theoretically studied. Numerical calculations are performed in the framework of the effective-mass approximation, and the impurity energies corresponding to the ground state and 2p(+/-) excited states are obtained via a variational procedure. The laser-field effects on the shallow-donor states are considered within the extended dressed-atom approach, which allows one to treat the problem 'impurity + heterostructure + laser field + magnetic field' as a renormalized 'impurity + heterostructure + magnetic field' problem, in which the laser effects are taken into account through a renormalization of both the conduction-band effective mass and fundamental semiconductor gap.
Country: Inglaterra
Editor: Iop Publishing Ltd
Rights: fechado
Identifier DOI: 10.1088/0953-8984/22/4/045303
Date Issue: 2010
Appears in Collections:Unicamp - Artigos e Outros Documentos

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