Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/61171
Type: Artigo de periódico
Title: Laser-dressed-band approach to shallow-impurity levels of semiconductor heterostructures
Author: Brandi, HS
Latge, A
Oliveira, LE
Abstract: We present a simple theoretical approach to treat the interaction of a laser field with a semiconductor system, in which the effect of the laser field is incorporated within a renormalization of the semiconductor effective mass. As an application, we discuss the effects of laser dressing on the transition energies between the 1s- and 2p(+/-)-like states of hydrogenic donors in GaAs-Ga1-xAlxAs QWs, in the presence of an external homogeneous magnetic field. It is shown that the modifications on the intradonor transitions due to weak intensity-laser dressing may be as important as the effects of a strongly applied magnetic field. (C) 1998 Elsevier Science Ltd. All rights reserved.
Subject: quantum wells
impurities in semiconductors
electronic band structure
Country: Inglaterra
Editor: Pergamon-elsevier Science Ltd
Rights: fechado
Identifier DOI: 10.1016/S0038-1098(98)00149-5
Date Issue: 1998
Appears in Collections:Unicamp - Artigos e Outros Documentos

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