Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/61160
Type: Artigo de periódico
Title: Laser interference structuring of a-Ge films on GaAs
Author: Santos, PV
Zanatta, AR
Jahn, U
Trampert, A
Dondeo, F
Chambouleyron, I
Abstract: We have investigated the laser interference crystallization (LIC) of amorphous germanium films on (100)-oriented GaAs substrates using nanosecond laser pulses. We demonstrate that LIC can produce periodic arrays of epitaxially crystallized Ge lines on GaAs with submicrometer widths. The gratings display a surface undulation with faceted surfaces, which depends on laser fluency. The undulation is attributed to the lateral solidification process induced by the temperature gradients created during the LIC process. (C) 2002 American Institute of Physics.
Country: EUA
Editor: Amer Inst Physics
Rights: aberto
Identifier DOI: 10.1063/1.1448674
Date Issue: 2002
Appears in Collections:Unicamp - Artigos e Outros Documentos

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