Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/60518
Type: Artigo de periódico
Title: Intraband absorption in GaAs-(Ga,Al) As variably spaced semiconductor superlattices under crossed electric and magnetic fields
Author: Reyes-Gomez, E
Raigoza, N
Oliveira, LE
Abstract: A theoretical study of the intraband absorption properties of GaAs-Ga1-xAlxAs variably spaced semiconductor superlattices under crossed magnetic and electric fields is presented. Calculations are performed for the applied electric field along the growth-axis direction, whereas the magnetic field is considered parallel to the heterostructure layers. By defining a critical electric field so that the heterostructure energy levels are aligned in the absence of the applied magnetic fields, one finds that, in the weak magnetic-field regime, an abrupt red shift of the absorption coefficient maxima is obtained at fields equal to or larger than the critical electric field, a fact which may be explained from the localization properties of the electron wave functions. Results in the strong magnetic-field regime reveal a rich structure on the intraband absorption coefficient which may be explained from the strong dispersion exhibited by both the energy levels and transition strengths as functions of the generalized orbit-center position. Moreover, the possibility of occurrence of absorption in a wide frequency range is also demonstrated. Present calculated results may be of interest for future design and improvement of multilayered-based photovoltaic and solar-cell devices. Copyright (C) EPLA, 2013
Country: França
Editor: Epl Association, European Physical Society
Rights: aberto
Identifier DOI: 10.1209/0295-5075/104/47008
Date Issue: 2013
Appears in Collections:Unicamp - Artigos e Outros Documentos

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