Please use this identifier to cite or link to this item:
Type: Artigo de periódico
Title: Influence of CH4/H-2 reactive ion etching on the deep levels of Si-doped AlxGa1-xAs (x=0.25)
Author: Pereira, RG
VanHove, M
dePotter, M
VanRossum, M
Abstract: We study the passivation and recovery of shallow and deep levels in Si-doped AlGaAs exposed to CH4/H-2 and H-2 reactive ion etching (RIE). The carrier concentration depth profile is determined by capacitance-voltage measurements. The activation energy to recover the silicon donors is found to be 1.1 eV for samples exposed to CH4/H-2 RIE and 1.3 eV for samples exposed to H-2 RIE. We study the behavior of DX centers in Si-doped AlGaAs layers after RIE exposure and subsequent thermal annealing by using deep level transient spectroscopy. For CH4/H-2 RIE a new emission is detected at the high temperature side. We identify this emission as the DX3 center, which is assigned to a DX center with three aluminum atoms surrounding the Si donor. This DX center is only detected on the samples exposed to CH4/H-2 RIE. We explain the formation of this deep level to the highly selective removal of Ga atoms in favor of Al atoms. Consequently Al-rich regions are created near the surface. (C) 1996 American Vacuum Society.
Editor: Amer Inst Physics
Rights: aberto
Identifier DOI: 10.1116/1.588555
Date Issue: 1996
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
WOSA1996UU48000033.pdf337 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.