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|Type:||Artigo de periódico|
|Title:||Influence of Al/TiN/SiO2 structure on MOS capacitor, Schottky diode, and fin field effect transistors devices|
dos Santos, MVP
|Abstract:||Titanium nitride (TiN) films were tested for their suitability as upper electrodes in metal-oxide-semiconductor (MOS) capacitors and Schottky diodes and as metal gate electrodes in fin field effect transistor devices. TiOxNy formation on TiN surfaces was confirmed by x-ray photoelectron spectroscopy and appears to be associated with exposure of the metal electrodes to ambient air. In order to avoid the formation of TiOxNy and TiO2, a layer of aluminum (Al) was deposited in situ after the TiN deposition. TiN work function was calculated for the devices to study how dipole variation at the interface TiN/SiO2 influences TiN work function. TiOxNy and TiO2 formation at the film surface was found to affect the dipole variations at the TiN/SiO2 interface increasing the dipole influence on MOS structure. Furthermore, the estimated values TiN work function are suitable for complementary metal-oxide-semiconductor (CMOS) technology. Finally, this work had shown that Al/TiN structure can be used in CMOS technology, especially on n-type metal-oxide-semiconductor field effect transistor devices. (C) 2013 American Vacuum Society.|
|Editor:||A V S Amer Inst Physics|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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