Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/60204
Type: Artigo de periódico
Title: Influence of Al/TiN/SiO2 structure on MOS capacitor, Schottky diode, and fin field effect transistors devices
Author: Lima, LPB
Diniz, JA
Radtke, C
dos Santos, MVP
Doi, I
Fo, JG
Abstract: Titanium nitride (TiN) films were tested for their suitability as upper electrodes in metal-oxide-semiconductor (MOS) capacitors and Schottky diodes and as metal gate electrodes in fin field effect transistor devices. TiOxNy formation on TiN surfaces was confirmed by x-ray photoelectron spectroscopy and appears to be associated with exposure of the metal electrodes to ambient air. In order to avoid the formation of TiOxNy and TiO2, a layer of aluminum (Al) was deposited in situ after the TiN deposition. TiN work function was calculated for the devices to study how dipole variation at the interface TiN/SiO2 influences TiN work function. TiOxNy and TiO2 formation at the film surface was found to affect the dipole variations at the TiN/SiO2 interface increasing the dipole influence on MOS structure. Furthermore, the estimated values TiN work function are suitable for complementary metal-oxide-semiconductor (CMOS) technology. Finally, this work had shown that Al/TiN structure can be used in CMOS technology, especially on n-type metal-oxide-semiconductor field effect transistor devices. (C) 2013 American Vacuum Society.
Country: EUA
Editor: A V S Amer Inst Physics
Rights: aberto
Identifier DOI: 10.1116/1.4817178
Date Issue: 2013
Appears in Collections:Unicamp - Artigos e Outros Documentos

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