Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/60203
Type: Artigo de periódico
Title: Influence of Al content on temperature dependence of excitonic transitions in quantum wells
Author: Lourenco, SA
Dias, IFL
Laureto, E
Duarte, JL
Filho, DOT
Meneses, EA
Leite, JR
Abstract: AlxGa1-xAs/GaAs double quantum well structures with different well thickness and different barrier aluminum concentration (x = 0.17, 0.30, 0.40) were characterized by the photoluminescence technique. The temperature dependence of excitonic transitions in the temperature range of 2 K to 300 It were investigated, The photoluminescence data obtained give clear evidence of the influence of the aluminum concentration on the temperature dependence of excitonic transitions in the quantum wells. Varshni [Physica (Utrecht) 34, 194 (1967)], Vina et al. [Phys. Rev. B 30, 1979 (1984)] and Passler [Phys. Stab. Sol. (b) 200, 155 (1997)] models were used to fit the experimental points.
Country: EUA
Editor: Springer-verlag
Rights: fechado
Identifier DOI: 10.1007/s100510170207
Date Issue: 2001
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
WOS000169540000002.pdf197.92 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.