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|Type:||Artigo de periódico|
|Title:||Influence of Al content on temperature dependence of excitonic transitions in quantum wells|
|Abstract:||AlxGa1-xAs/GaAs double quantum well structures with different well thickness and different barrier aluminum concentration (x = 0.17, 0.30, 0.40) were characterized by the photoluminescence technique. The temperature dependence of excitonic transitions in the temperature range of 2 K to 300 It were investigated, The photoluminescence data obtained give clear evidence of the influence of the aluminum concentration on the temperature dependence of excitonic transitions in the quantum wells. Varshni [Physica (Utrecht) 34, 194 (1967)], Vina et al. [Phys. Rev. B 30, 1979 (1984)] and Passler [Phys. Stab. Sol. (b) 200, 155 (1997)] models were used to fit the experimental points.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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