Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/60109
Type: Artigo de periódico
Title: Inductively coupled plasma etching of In-based compound semiconductors in CH4/H-2/Ar
Author: Diniz, JA
Swart, JW
Jung, KB
Hong, J
Pearton, SJ
Abstract: Inductively coupled plasma etching of InP, InSb, InGaAs, InGaP and InGaAsP was performed in CH4/H-2/Ar plasmas bs a function of CH4-to-H-2 ratio ICP source power and rf chuck power. Etch rates as high as 6,000 Angstrom xmin(-1) were obtained for InP, but the surface is extremely rough (> 70 nm root-mean-square roughness) under all conditions due to preferential loss of P. Optical emission spectroscopy shows efficient H-2 dissociation at even moderate ICP source powers, leading to the preferential group V loss. By contrast ternary and quaternary materials show excellent morphologies over a wide range of plasma conditions. (C) 1998 Published by Elsevier Science Ltd, All rights reserved.
Country: Inglaterra
Editor: Pergamon-elsevier Science Ltd
Rights: fechado
Identifier DOI: 10.1016/S0038-1101(98)00136-1
Date Issue: 1998
Appears in Collections:Unicamp - Artigos e Outros Documentos

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