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|Type:||Artigo de periódico|
|Title:||Inductively coupled plasma etching of In-based compound semiconductors in CH4/H-2/Ar|
|Abstract:||Inductively coupled plasma etching of InP, InSb, InGaAs, InGaP and InGaAsP was performed in CH4/H-2/Ar plasmas bs a function of CH4-to-H-2 ratio ICP source power and rf chuck power. Etch rates as high as 6,000 Angstrom xmin(-1) were obtained for InP, but the surface is extremely rough (> 70 nm root-mean-square roughness) under all conditions due to preferential loss of P. Optical emission spectroscopy shows efficient H-2 dissociation at even moderate ICP source powers, leading to the preferential group V loss. By contrast ternary and quaternary materials show excellent morphologies over a wide range of plasma conditions. (C) 1998 Published by Elsevier Science Ltd, All rights reserved.|
|Editor:||Pergamon-elsevier Science Ltd|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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