Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/60076
Type: Artigo de periódico
Title: INDIUM TIN OXIDE AS AN OPTICAL MEMORY MATERIAL
Author: DEANDRADE, MC
MOEHLECKE, S
Abstract: Indium Tin Oxide (ITO) films prepared by reactive rf sputtering show excellent properties for optical recording applications in a very narrow range of oxygen partial pressure (around 4 x 10(-5) Torr). This narrow range is at the edge of a plateau in the electrical conductivity of the films. A small increase in the oxygen partial pressure (P(02) almost-equal-to 5 x 10(-5) Torr) causes a large and abrupt change in the electrical conductivity as well as in the structural and optical properties of these films. In addition, irradiating films at the edge of the plateau (P(02) almost-equal-to 4 x 10(-5)) with a low-power pulsed laser (less-than-or-equal-to 25 mW) yields transparent films. These results suggest that the same mechanism may be responsible for the opaque to transparent transformations observed in these experiments.
Editor: Springer Verlag
Rights: fechado
Date Issue: 1994
Appears in Collections:Unicamp - Artigos e Outros Documentos

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