Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/59699
Type: Artigo de periódico
Title: Photothermal and electroreflectance images of biased metal-oxide-semiconductor field-effect transistors: Six different kinds of subsurface microscopy
Author: Batista, JA
Mansanares, AM
daSilva, EC
Fournier, D
Abstract: Six different configurations for metal-oxide-semiconductor field-effect-transistor reflectance microscopy are presented, each one revealing a particular contrast of the operating structure. These different images are obtained by interchanging the modulation of gate-source and drain-source potentials, as well as by varying the probe beam intensity. Three main components were identified in the signal, their relative importance depending on the experimental configuration: the electroreflectance component, the photoinjected carrier (probe-induced) component and the bias current (Joule effect) component. The high ability of the technique to detect defects in these structures is also demonstrated. (C) 1997 American Institute of Physics.
Editor: Amer Inst Physics
Rights: aberto
Identifier DOI: 10.1063/1.365832
Date Issue: 1997
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
There are no files associated with this item.


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.