Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/59677
Type: Artigo de periódico
Title: Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates
Author: Noriega, OC
Tabata, A
Soares, JANT
Rodrigues, SCP
Leite, JR
Ribeiro, E
Fernandez, JRL
Meneses, EA
Cerdeira, F
As, DJ
Schikora, D
Lischka, K
Abstract: The optical properties of cubic GaN epitaxial layers were investigated by modulated photoreflectance (PR) and photoluminescence in the temperature interval from 5 to 300 K. The epilayers were grown on GaAs(001) substrates by molecular beam epitaxy using a nitrogen RIF-activated plasma source. The PR spectra show a transition which is well fitted using the third-derivative functional form of the unperturbed dielectric function, which we interpret as band-to-band transition. Our results allow determination of the temperature dependence of the main gap of c-GaN and give insights into the residual strain in the film, as well as allow us to estimate the binding energy of the complex formed by an exciton bound to a neutral acceptor. (C) 2003 Elsevier Science B.V. All rights reserved.
Subject: photoluminescence
photoreflectance
molecular beam epitaxy
GaN
Country: Holanda
Editor: Elsevier Science Bv
Rights: fechado
Identifier DOI: 10.1016/S0022-0248(02)02517-4
Date Issue: 2003
Appears in Collections:Unicamp - Artigos e Outros Documentos

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