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|Type:||Artigo de periódico|
|Title:||PHOTOREFLECTANCE IN GE/GE0.7SI0.3 STRAINED-LAYER SUPERLATTICES|
|Abstract:||We report low-temperature (77 K) photoreflectance measurements in two Ge/Ge0.7Si0.3 strained-layer superlattices, in the photon energy range 0.8-1.8 eV. The multiple lines observed in our spectra in this energy region can be consistently explained in terms of quantum confinement of zone-center bulk Ge states. Quantitative agreement is obtained when energy-dependent masses are used for the electrons and light-hole states within a scalar three-band model. This interpretation leads to values of the average valence-band offsets in good agreement with previous ab initio theoretical calculations.|
|Editor:||American Physical Soc|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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