Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/59675
Type: Artigo de periódico
Title: PHOTOREFLECTANCE IN GE/GE0.7SI0.3 STRAINED-LAYER SUPERLATTICES
Author: RODRIGUES, PAM
CERDEIRA, F
BEAN, JC
Abstract: We report low-temperature (77 K) photoreflectance measurements in two Ge/Ge0.7Si0.3 strained-layer superlattices, in the photon energy range 0.8-1.8 eV. The multiple lines observed in our spectra in this energy region can be consistently explained in terms of quantum confinement of zone-center bulk Ge states. Quantitative agreement is obtained when energy-dependent masses are used for the electrons and light-hole states within a scalar three-band model. This interpretation leads to values of the average valence-band offsets in good agreement with previous ab initio theoretical calculations.
Country: EUA
Editor: American Physical Soc
Rights: aberto
Identifier DOI: 10.1103/PhysRevB.46.15263
Date Issue: 1992
Appears in Collections:Unicamp - Artigos e Outros Documentos

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