Please use this identifier to cite or link to this item:
Type: Artigo de periódico
Title: Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate
Author: Pacheco-Salazar, DG
Leite, JR
Cerdeira, F
Meneses, EA
Li, SF
As, DJ
Lischka, K
Abstract: In this work we report optical experiments on pseudomorphic cubic InxGa1-xN epilayers grown on cubic GaN/3C-SiC templates. We make a detailed study of photoluminescence (PL) and photoluminescence excitation spectroscopy on these samples, with spectra taken at various temperatures ( between 2 K and 300 K) and using variable wavelength sources to excite the PL spectra. The combined use of these techniques suggests the existence of indium-rich clusters, constituting a negligibly small fraction of the volume of the total layer. Our results reinforce the notion that the large Stokes-like shift ( a difference of approximately 300 meV between emission and absorption) observed in these samples is due to the fact that light absorption occurs in the bulk alloy of average composition while recombination occurs within the indium-rich clusters.
Country: Inglaterra
Editor: Iop Publishing Ltd
Rights: fechado
Identifier DOI: 10.1088/0268-1242/21/7/003
Date Issue: 2006
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
WOS000238924000004.pdf413.55 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.