Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/59599
Type: Artigo de periódico
Title: Photodetection With Gate-Controlled Lateral BJTs from Standard CMOS Technology
Author: Campos, FD
Faramarzpour, N
Marinov, O
Deen, MJ
Swart, JW
Abstract: The silicon-based gate-controlled lateral bipolar junction transistor (BJT) is a controllable four-terminal photodetector with very high responsivity at low-light intensities. It is a hybrid device composed of a MOSFET, a lateral BJT, and a vertical BJT. Using sufficient gate bias to operate the MOS transistor in inversion mode, the photodetector allows for increasing the photocurrent gain by 10(6) at low light intensities when the base-emitter voltage is smaller than 0.4 V, and BJT is off. Two operation modes, with constant voltage bias between gate and emitter/source terminals and between gate and base/body terminals, allow for tuning the photoresponse from sublinear to slightly above linear, satisfying the application requirements for wide dynamic range, high-contrast, or linear imaging. MOSFETs from a standard 0.18-mu m triple-well complementary-metal oxide semiconductor technology with a width to length ratio of 8 mu m/2 mu m and a total area of similar to 500 mu m(2) are used. When using this area, the responsivities are 16-20 kA/W.
Subject: Active pixel sensor
complementary-metal-oxide semiconductor (CMOS) image sensor
gated-controlled lateral phototransistor
high dynamic range phototransistor
high responsivity photodetector
lateral bipolar junction transistor (BJT)
metal oxide conductor phototransistor
Country: EUA
Editor: Ieee-inst Electrical Electronics Engineers Inc
Rights: fechado
Identifier DOI: 10.1109/JSEN.2012.2235827
Date Issue: 2013
Appears in Collections:Unicamp - Artigos e Outros Documentos

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