Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/59591
Type: Artigo de periódico
Title: Photocurrent Calculation of Intersubband Transitions to Continuum-Localized States in GaAs/AlGaAs Multiquantum Wells for Mid-Infrared Photodetector
Author: Penello, GM
Degani, MH
Maialle, MZ
Pires, MP
Souza, PL
Abstract: In this paper, we propose a system based on GaAs heterostructure where it is possible to generate photocurrent with mid-infrared radiation. This system is based on a central quantum well (CQW) embedded in a superlattice. Because of the CQW, which acts as a defect, there are localized states between the mini-bands in the continuum of the conduction band. Unlike the usual systems where the final states are delocalized, the oscillator strength due to the transitions between electrons occupying the ground-state to these continuum-localized states is enhanced. An applied electrical bias mixes the mini-band states with the localized state in the continuum, and due to the combined effects of strong oscillator strength and high transmission coefficients, narrow and sharp peaks are observed in the photocurrent when exciting these final states. We calculate and present results of the absorption and photocurrent for a system built to operate at 4.1 mu m and discuss their dependence with the bias applied to the system and with the intensity of the incident radiation.
Subject: Infrared detectors
quantum wells
semiconductor devices
semiconductor superlattices
Country: EUA
Editor: Ieee-inst Electrical Electronics Engineers Inc
Rights: fechado
Identifier DOI: 10.1109/JQE.2013.2272242
Date Issue: 2013
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
There are no files associated with this item.


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.