Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/59587
Type: Artigo de periódico
Title: PHOTOCONDUCTIVITY OF INTRINSIC AND NITROGEN-DOPED HYDROGENATED AMORPHOUS-GERMANIUM THIN-FILMS
Author: MARCANO, G
ZANATTA, AR
CHAMBOULEYRON, I
Abstract: In this work the effects of nitrogen doping on the photoconductivity of hydrogenated amorphous germanium (a-Ge:H) thin films are presented and discussed. The quantum efficiency-mobility-lifetime (etamutau) product of majority carriers has been measured as a function of light intensity in samples containing different dopant concentrations. It has been found that, for low dopant concentrations, the incorporation of nitrogen atoms in hydrogenated amorphous germanium films enhance the photoconductivity, as expected from n-type doping in tetrahedrally coordinated amorphous semiconductors. The results have been explained in terms of changes in charge distribution in the mobility gap on doping. The sensitization depends on the position of the Fermi energy, the maximum being at around E(c) - E(F) less-than-or-equal-to 0.2 eV, which corresponds to a nitrogen content of approximately 0.03 at %. The recombination kinetics for N-doped samples is always dominated by a monomolecular process, a consequence of the rather large density of electron states in the pseudogap of a-Ge:H.
Editor: Amer Inst Physics
Rights: aberto
Identifier DOI: 10.1063/1.355918
Date Issue: 1994
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
WOSA1994NJ73400054.pdf1.08 MBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.