Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/59356
Type: Artigo de periódico
Title: Permittivity of amorphous hydrogenated carbon (alpha-C : H) films as a function of thermal annealing
Author: Balachova, OV
Swart, JW
Braga, ES
Cescato, L
Abstract: New metal-insulator-semiconductor structures with a composite insulating layer, consisting of an amorphous hydrogenated carbon (a-C:H) film and a silicon dioxide, were obtained on silicon substrates. Carbon films were deposited on SiO2 layer by radio-frequency plasma-enhanced chemical vapor deposition (rf PECVD) method from methane. The structures were annealed at the annealing temperature T-a = 250, 275, 300, and 350 degreesC. C-V characteristics of the annealed and as-grown metal-amorphous carbon-oxide-semiconductor (MCOS) structures were examined at room temperature at a frequency of 1 MHz and compared with C-V characteristics of the classic metal-oxide-semiconductor (MOS) system. High-frequency C-V curves of both MCOS and MOS structures were used for extracting the permittivity epsilon (a-C:H) of carbon films before and after thermal annealing. epsilon (a-C:H) showed no variations with subsequent annealing of the structure up to T-a = 250 degreesC, but it was observed to decrease from 5.6 to 2.8 as the film was annealed from 250 degreesC up to 300 degreesC with the most rapid changes occuring between 275 and 300 degreesC. (C) 2001 Elsevier Science Ltd. All rights reserved.
Subject: amorphous hydrogenated carbon
annealing
C-V characterization
permittivity
Country: Inglaterra
Editor: Elsevier Advanced Technology
Rights: fechado
Identifier DOI: 10.1016/S0026-2692(01)00030-1
Date Issue: 2001
Appears in Collections:Unicamp - Artigos e Outros Documentos

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