Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/58932
Type: Artigo de periódico
Title: Reaction of Si (100) with silane-methane low-power plasma: SiC buffer-layer formation
Author: Bittencourt, C
Abstract: The formation of a SiC buffer layer on Si (100) at substrate temperature as low as 950 degrees C using radicals of methane molecules obtained in a low-power-density glow-discharge plasma, is presented. The x-ray photoemission spectroscopy and low-energy-yield spectroscopy performed in the constant final-state mode suggest that the layers obtained were stoichiometric. To understand the mechanism of heteroepitaxial silicon carbide growth, the early stage of SiC nucleation was observed by atomic force microscopy and reflection high-energy electron diffraction. The results reveal that three-dimensional epitaxial crystallites nucleate at the earliest growth stage followed by a further Volmer-Weber growth. (C) 1999 American Institute of Physics. [S0021-8979(99)04620-4].
Country: EUA
Editor: Amer Inst Physics
Rights: aberto
Identifier DOI: 10.1063/1.371415
Date Issue: 1999
Appears in Collections:Unicamp - Artigos e Outros Documentos

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