Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/58901
Type: Artigo de periódico
Title: RAPID THERMAL-OXIDATION OF SILICON WITH DIFFERENT THERMAL ANNEALING CYCLES IN NITROGEN - INFLUENCE ON SURFACE MICROROUGHNESS AND ELECTRICAL CHARACTERISTICS
Author: DOSSANTOS, SG
HASENACK, CM
LOPES, MCV
BARANAUSKAS, V
Abstract: The influence of two different thermal annealing cycles on the microroughness of the Si-SiO2 interface and on the electrical characteristics of the Si-SiO2 system has been investigated. Experiments were performed growing oxides by rapid thermal oxidation (RTO) and post-oxidation annealing in N-2 using a slow cooling ramp recipe (SCRR) or a conventional pulsed thermal annealing recipe (PTAR). Compared to PTAR, SCRR yielded a more severe annealing in N-2 and slower temperature decay after RTO. The thickness of the as-grown oxides was measured by ellipsometry in the whole wafer area. Laser light scattering (LLS) at a grazing angle and atomic force microscopy (AFM) have been used for measuring the Si-SiO2 interface topography after the SiO2 removal. LLS was mainly used for large-area scans (micrometric resolution) and AFM for small-size areas (atomic resolution). The results showed that oxides prepared with SCRR exhibited a smoother Si-SiO2 interface at the nanometric scale and protrusions up to 2.5 nm high and up to 100 nm wide ('large protrusions') at a submicrometre scale. On the other hand, the oxides prepared with PTAR resulted in an Si-SiO2 interface with protrusions up to 2 nm high and up to 5 nm wide ('sharp protrusions') at the nanometric scale and broad localized regions, sparsely distributed over the wafer area, with high root mean square (RMS) microroughness. By measuring the electrical parameters of a large number of MOS capacitors made with these oxides, we demonstrated evident experimental correlation of the electric breakdown field (E(bd)), charge to breakdown (Q(bd)), Si-SiO2 interface state density (D-it) and Al-SiO2 potential barrier height (phi(0)) with surface microroughness and therefore with the thermal annealing cycle in N-2. The oxides prepared by SCRR exhibited improved overall electrical parameters as compared to the oxides prepared by PTAR.
Country: Inglaterra
Editor: Iop Publishing Ltd
Rights: fechado
Date Issue: 1995
Appears in Collections:Unicamp - Artigos e Outros Documentos

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