Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/58900
Type: Artigo de periódico
Title: RAPID THERMAL-DIFFUSION OF SN FROM SPIN-ON-GLASS INTO GAAS
Author: HERNANDES, CS
SWART, JW
PUDENZI, MAA
KRAUS, GT
SHACHAMDIAMAND, Y
GIANNELIS, EP
Abstract: Diffusion of dopants into semiconductors from a spin-on-glass (SOG) source is of great interest because of its versatility, simplicity, and relatively low cost. SiO2 SOG films doped with Sn and/or Ga were used as a diffusion source on GaAs. Diffusion was studied during rapid thermal annealing with or without an As over-pressure ambient, which was produced by either the proximity over-pressure or the enhanced over-pressure proximity techniques. Diffusivity of Sn was observed to decrease as As over-pressure increases. Modifying the Sn doped SOG to contain 4 mole percent Ga slightly reduced the Sn diffusivity. An explanation of these results is proposed based on the chemical reactions between the SOG and GaAs. Highly doped layers (1-3 x 10(18) cm(-3)) with good electron mobility (>1000 cm(2)/V . s) resulting in abrupt shallow junctions (<0.5 mu m) were obtained.
Editor: Electrochemical Soc Inc
Rights: aberto
Identifier DOI: 10.1149/1.2050099
Date Issue: 1995
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
WOSA1995RN05300058.pdf400.2 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.