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|Type:||Artigo de periódico|
|Title:||Rapid thermal annealing of Mg+ and P+ co-implanted GaAs|
|Abstract:||The electrical activation of Mg and carrier profile distribution after rapid thermal annealing (RTA) in GaAs samples dually implanted with Mg+ (1.0 x 10(15) cm(-2) at 100 keV) and P+ to different doses and energies were studied. The main results include the enhancement of electrical activation yield (EAY) of Mg and the reduction of profile redistribution with the increasing of the P+ dose. A maximum of the EAY of about 68% and carrier peak concentration of similar or equal to 3 x 10(19) cm(-3) were measured after RTA at 950 degrees C for 5 s. The coexistence of high damage concentration level and a P concentration similar or higher than that of Mg, are the requirements for obtaining higher sheet carrier concentrations and shallower carrier profiles. The results are discussed considering possible effects of the P+ implantation on the concentration of Ga sublattice point defects.|
|Editor:||Elsevier Science Bv|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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