Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/58847
Type: Artigo
Title: Raman scattering from the bulk of photo-excited CdTe and InP
Author: Castro, A. R. B. de
Turtelli, R. S.
Abstract: We report measurements of Raman scattering cross-sections by single-particle and collective electronic excitations, as well as by optical phonons in photo-excited CdTe and InP. For the latter our data on electronic light scattering are in excellent quantitative agreement with recent theoretical calculations, while those for Raman scattering by LO phonons correlate very well to our previous data on highly excited GaAs. For CdTe the single particle spectrum is characteristic of a collision time dominated regime and we deduce an electronic life time ? < psec.
We report measurements of Raman scattering cross-sections by single-particle and collective electronic excitations, as well as by optical phonons in photo-excited CdTe and InP. For the latter our data on electronic light scattering are in excellent quantitative agreement with recent theoretical calculations, while those for Raman scattering by LO phonons correlate very well to our previous data on highly excited GaAs. For CdTe the single particle spectrum is characteristic of a collision time dominated regime and we deduce an electronic life time τ < psec.
Subject: Telureto de cádmio
Fosfeto de índio
Country: Reino Unido
Editor: Pergamon Press
Citation: Solid State Communications. Pergamon-elsevier Science Ltd, v. 47, n. 6, n. 475, n. 478, 1983.
Rights: fechado
Identifier DOI: 10.1016/0038-1098(83)91071-2
Address: https://www.sciencedirect.com/science/article/pii/0038109883910712
Date Issue: 1983
Appears in Collections:IFGW - Artigos e Outros Documentos

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