Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/58835
Type: Artigo de periódico
Title: Raman phonon modes of zinc blende InxGa1-xN alloy epitaxial layers
Author: Tabata, A
Leite, JR
Lima, AP
Silveira, E
Lemos, V
Frey, T
As, DJ
Schikora, D
Lischka, K
Abstract: Transverse-optical (TO) and longitudinal-optical (LO) phonons of zinc blende InxGa1-xN (0 less than or equal to x less than or equal to 0.31) layers are observed through first-order micro-Raman scattering experiments. The samples are grown by molecular-beam epitaxy on GaAs (001) substrates, and x-ray diffraction measurements are performed to determine the epilayer alloy composition. Both the TO and LO phonons exhibit a one-mode-type behavior, and their frequencies display a linear dependence on the composition. The Raman data reported here are used to predict the A(1) (TO) and E-1 (TO) phonon frequencies of the hexagonal InxGa1-xN alloy. (C) 1999 American Institute of Physics. [S0003-6951(99)01234-6].
Country: EUA
Editor: Amer Inst Physics
Rights: aberto
Identifier DOI: 10.1063/1.124608
Date Issue: 1999
Appears in Collections:Unicamp - Artigos e Outros Documentos

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