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|Type:||Artigo de periódico|
|Title:||Rabi oscillations in two-level semiconductor systems|
|Abstract:||Rabi oscillation, in coherent optical excitations in bulk GaAs and quantum dot two-level systems may be converted into deterministic photocurrents, with the impurities or dots providing the tag for each qubit. Here we perform a theoretical analysis of the damping of Rabi oscillations in two-level semiconductor systems. Present calculations, through optical Bloch equations on excitonic two-level InxGa1-xAs quantum-dot systems, are found in good agreement with the corresponding experimental data. Calculated results indicate that the nature underlying the dephasing mechanism associated to the damping of the measured Rabi oscillations, which has previously remained as an open question, may be associated with a field-dependent recombination rate related to the inhomogeneous broadening of the excitonic lines in the InxGa1-xAs two-level QD system. (c) 2005 Elsevier Ltd. All rights reserved.|
|Editor:||Pergamon-elsevier Science Ltd|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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