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Type: Artigo de periódico
Author: MAHAN, GD
Abstract: The nonequilibrium quasi-Fermi-levels of electrons and holes in quantum wells are calculated during photoluminescence. It is assumed the electrons and holes are created by continuous laser excitation. Various recombination processes are included: electron radiative recombination with holes bound at neutral acceptors, electron radiative recombination with free holes, hole trapping at ionized acceptors, and Auger decay. A numerical example is presented for acceptors in GaAs/Ga(1-x)Al(x)As quantum wells.
Country: EUA
Editor: American Physical Soc
Rights: aberto
Identifier DOI: 10.1103/PhysRevB.44.3150
Date Issue: 1991
Appears in Collections:Unicamp - Artigos e Outros Documentos

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