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|Type:||Artigo de periódico|
|Title:||QUASI-FERMI-LEVELS IN QUANTUM-WELL PHOTOLUMINESCENCE|
|Abstract:||The nonequilibrium quasi-Fermi-levels of electrons and holes in quantum wells are calculated during photoluminescence. It is assumed the electrons and holes are created by continuous laser excitation. Various recombination processes are included: electron radiative recombination with holes bound at neutral acceptors, electron radiative recombination with free holes, hole trapping at ionized acceptors, and Auger decay. A numerical example is presented for acceptors in GaAs/Ga(1-x)Al(x)As quantum wells.|
|Editor:||American Physical Soc|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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