Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/58722
Type: Artigo de periódico
Title: Quasi-bound states and intra-band transition energies in GaAs-(Ga,Al)As variably spaced semiconductor superlattices
Author: Reyes-Gomez, E
Oliveira, LE
de Dios-Leyva, M
Abstract: A theoretical study of multi-quantum-well semiconductor heterostructures under applied electric fields perpendicular to the layers is performed within the transfer-matrix approach. Calculations are carried out for two different variably spaced superlattices.. designed in such a way that the conduction-electron states resonate at a certain value of the electric field. We have calculated the density of states for various values of the applied electric field, and results indicate a richly peaked structure associated to quasi-bound states of electrons, heavy holes and light holes. Results shown for the electric-field dependence of the interband transitions associated to electron-hole recombination indicate the possibility of a coherent resonant tunnelling, at a critical field, which may have applications in the design of more efficient solar-cell devices. (c) 2005 Elsevier B.V. All rights reserved.
Subject: superlattices
multi-quantum wells
solar cells
Country: Holanda
Editor: Elsevier Science Bv
Rights: fechado
Identifier DOI: 10.1016/j.physb.2005.01.462
Date Issue: 2005
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
WOS000228603800035.pdf444.63 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.