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|Type:||Artigo de periódico|
|Title:||Quasi-bound states and intra-band transition energies in GaAs-(Ga,Al)As variably spaced semiconductor superlattices|
de Dios-Leyva, M
|Abstract:||A theoretical study of multi-quantum-well semiconductor heterostructures under applied electric fields perpendicular to the layers is performed within the transfer-matrix approach. Calculations are carried out for two different variably spaced superlattices.. designed in such a way that the conduction-electron states resonate at a certain value of the electric field. We have calculated the density of states for various values of the applied electric field, and results indicate a richly peaked structure associated to quasi-bound states of electrons, heavy holes and light holes. Results shown for the electric-field dependence of the interband transitions associated to electron-hole recombination indicate the possibility of a coherent resonant tunnelling, at a critical field, which may have applications in the design of more efficient solar-cell devices. (c) 2005 Elsevier B.V. All rights reserved.|
|Editor:||Elsevier Science Bv|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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