Please use this identifier to cite or link to this item:
|Type:||Artigo de periódico|
|Title:||Thermoreflectance microscopy applied to the study of electrostatic discharge degradation in metal-oxide-semiconductor field-effect transistors|
|Author:||de Freitas, LR|
da Silva, EC
|Abstract:||We investigated the effect of electrostatic discharge on n-channel metal-oxide-semiconductor field-effect transistors using the thermoreflectance microscopy. The gate terminals of the transistors were submitted to electrostatic pulses on a zap system that respects the human body model. The pulse intensity varied from 40 to 140 V in a cumulative sequence. Electrical characterization showed that the transistor threshold voltage was no longer positive for pulses of 110 V and higher. No significant changes in the thermoreflectance maps were observed in these cases. For pulses of 140 V a large leakage current appeared, and the thermoreflectance maps revealed strong peaks (localized spot) associated with the induced damage. (c) 2005 American Institute of Physics.|
|Editor:||Amer Inst Physics|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.