Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/58175
Type: Artigo de periódico
Title: Thermoreflectance microscopy applied to the study of electrostatic discharge degradation in metal-oxide-semiconductor field-effect transistors
Author: de Freitas, LR
da Silva, EC
Mansanares, AM
Pimentel, MBC
Filho, SE
Batista, JA
Abstract: We investigated the effect of electrostatic discharge on n-channel metal-oxide-semiconductor field-effect transistors using the thermoreflectance microscopy. The gate terminals of the transistors were submitted to electrostatic pulses on a zap system that respects the human body model. The pulse intensity varied from 40 to 140 V in a cumulative sequence. Electrical characterization showed that the transistor threshold voltage was no longer positive for pulses of 110 V and higher. No significant changes in the thermoreflectance maps were observed in these cases. For pulses of 140 V a large leakage current appeared, and the thermoreflectance maps revealed strong peaks (localized spot) associated with the induced damage. (c) 2005 American Institute of Physics.
Country: EUA
Editor: Amer Inst Physics
Rights: aberto
Identifier DOI: 10.1063/1.1904727
Date Issue: 2005
Appears in Collections:Unicamp - Artigos e Outros Documentos

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