Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/58159
Type: Artigo
Title: Thermoelastic analysis of a silicon surface under x-ray free-electron-laser irradiation
Author: Castro, A. R. B. de
Vasconcellos, Áurea R.
Luzzi, Roberto
Abstract: We present an analysis of the time evolution of a highly excited silicon substrate after partial absorption of a femtosecond soft x-ray pulse. The detailed time-dependent thermoelastic behavior of the substrate in terms of the displacements u(r,t) is derived for time delays for which the usual local thermodynamic variables, temperature T(r,t) and density n(r,t), become well-defined, namely, a few hundred femtoseconds after x-ray pulse absorption. For practical optical components under present conditions of operation with trains of pulses, we find that in a worst case scenario, already the second pulse in the train could be adversely affected by dynamic thermal distortion induced by the preceding pulse.
Subject: Termodinâmica de sistemas em não-equilíbrio
Radiação
Country: Estados Unidos
Editor: American Institute of Physics
Citation: Review Of Scientific Instruments. Amer Inst Physics, v. 81, n. 7, 2010.
Rights: fechado
Identifier DOI: 10.1063/1.3455203
Address: https://aip.scitation.org/doi/abs/10.1063/1.3455203
Date Issue: 2010
Appears in Collections:IFGW - Artigos e Outros Documentos

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