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|Type:||Artigo de periódico|
|Title:||MONOLITHICALLY INTEGRATED SQW LASER AND HBT LASER DRIVER VIA SELECTIVE OMVPE REGROWTH|
|Abstract:||An AlGaAs/GaAs Npn HBT laser driver circuit and a pseudomorphic InGaAs/GaAs/AlGaAs graded index SQW laser have been laterally integrated to maintain surface planarity using selective OMVPE regrowth of the HBT. The self-aligned HBT's exhibit a dc current gain of 30 and an f(t) (f(max)) of 45 (60) GHz. The 980 nm lasers exhibit room temperature threshold current densities as low as 420 (320) A/cm2 for CW (pulsed) operation. The cavities measuring 40 (7) x 500 mum2 and have less than 1 (2) of series resistance. SPICE simulations of the integrated driver indicate operating speeds over 10 Gb/s are possible.|
|Editor:||Ieee-inst Electrical Electronics Engineers Inc|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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