Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/57863
Type: Artigo de periódico
Title: MONOLITHICALLY INTEGRATED SQW LASER AND HBT LASER DRIVER VIA SELECTIVE OMVPE REGROWTH
Author: SLATER, DB
ENQUIST, PM
HUTCHBY, JA
REED, FE
MORRIS, AS
KOLBAS, RM
TREW, RJ
LUJAN, AS
SWART, JW
Abstract: An AlGaAs/GaAs Npn HBT laser driver circuit and a pseudomorphic InGaAs/GaAs/AlGaAs graded index SQW laser have been laterally integrated to maintain surface planarity using selective OMVPE regrowth of the HBT. The self-aligned HBT's exhibit a dc current gain of 30 and an f(t) (f(max)) of 45 (60) GHz. The 980 nm lasers exhibit room temperature threshold current densities as low as 420 (320) A/cm2 for CW (pulsed) operation. The cavities measuring 40 (7) x 500 mum2 and have less than 1 (2) of series resistance. SPICE simulations of the integrated driver indicate operating speeds over 10 Gb/s are possible.
Editor: Ieee-inst Electrical Electronics Engineers Inc
Rights: fechado
Identifier DOI: 10.1109/68.229808
Date Issue: 1993
Appears in Collections:Unicamp - Artigos e Outros Documentos

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